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GM1JO35200AE series
High-luminosity(AlGaInP) Leadless Chip LED
GM1JO35200AE series
1608 Size, 0.35mm Thickness,
Super Thin Type Leadless Chip
LED
I Outline Dimensions
1.2
1.0
1
2
1.6?.15
(0.2)
0.35?.05
(0.3)
(0.3)
(0.3)
1
2
Emission center
Epoxy resin
PWB
Chip side mark
1.Plating area
Resist
2.Pin connections
1Cathode
2Anode
3.Unspecified tolerance:?.1
GM1JR35200AE
GM1JJ35200AE
GM1JS35200AE
GM1JV35200AE
Red
Orange
Sunset-orange
Amber
AlGaInP on GaAs
AlGaInP on GaAs
AlGaInP on GaAs
AlGaInP on GaAs
20
20
20
20
52
52
52
52
350
350
350
350
40
40
40
40
5
5
5
5
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-40 to +100
-40 to +100
-40 to +100
-40 to +100
0.27
0.27
0.27
0.27
0.53
0.53
0.53
0.53
Model No. Emitting color Material
Forward current
IF
(mA)
Power dissipation
P
(mW)
Peak forward current
IFM
*1
(mA)
Operating temperature
Topr
(贑)
Storage temperature
Tstg
(贑)
Soldering temperature
Tsol
*2
(贑)
Reverse voltage
VR
(V)
(Ta=25贑)
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature (350贑) of hand soldering. Temperature of reflow soldering is shown on page 2.
Derating factor
(mA/贑)
DC Pulse
I Absolute Maximum Ratings
GM1JR35200AE
GM1JJ35200AE
GM1JS35200AE
GM1JV35200AE
639
627
609
591
631
618
605
588
15
19
19
19
52
52
52
52
100
100
100
100
4
4
4
4
60
60
60
60
1
1
1
1
15
15
15
15
Model No.
Lens type
Forward voltage
VF(V)
?SPAN class="pst GM1JJ35200AE_2653719_10">p(nm)
TYP
IV(mcd)
TYP
Peak emission
wavelength
?SPAN class="pst GM1JJ35200AE_2653719_10">d(nm)
TYP
Dominant
wavelength
Luminous
intensity
Page for
characteristics
diagrams
Colorless
transparency
(IF=5mA,Ta=25贑)
TYP MAX
2.0
2.0
2.0
2.0
2.6
2.6
2.6
2.6
(MHZ)
VR
(V)
IR(礎)
MAX
Ct(pF)
TYP
Reverse current Terminal capacitance
Spectrum radiation
bandwidth
?nm)
TYP
I Electro-optical Characteristics
(Unit : mm)
I Directive Characteristics
0?/DIV>
-20?/DIV>
+20?/DIV>
+40?/DIV>
+60?/DIV>
+80?/DIV>
-40?/DIV>
-60?/DIV>
-80?/DIV>
0?/DIV>
-20?/DIV>
+20?/DIV>
+40?/DIV>
+60?/DIV>
+80?/DIV>
-40?/DIV>
-60?/DIV>
-80?/DIV>
Y
X
80
40
20
0
60
100
80
40
20
0
60
100
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